Team Leader 


Thematic overview

Theoretical approaches and simulation tools are indispensable ingredients helping to support and to advance novel developments of spin electronic devices including magnetic random access memories (MRAM), spin torque nanooscillators (STO), sensors etc. They allow providing insights into electronic structure of materials for spintronics and into the nature of spintronic phenomena such as Giant (GMR) and Tunnel magnetoresistance (TMR), Spin Transfer Torques (STT), Interlayer Exchange Coupling (IEC), Spin Hall Effect (SHE) etc. A wide range of theoretical methods is used at Spintec including ab-initio, tight-binding, free electron and diffusive approaches in order to address aforementioned phenomena in magnetic nanostructures including spin valves, magnetic tunnel junctions, graphene-based nanomaterials etc. In order to simulate magnetization dynamics at nm length scale ant sub ns regime including switching times in MRAM or output frequencies in STNO, macrospin and micromagnetic simulation tools based on solution of Landau-Lifshitz-Gilbert (LLG) equation are used. The combination of all these approaches allow not only explaining experimental observations and providing solutions for specific problems, but also predicting novel properties and phenomena guiding the experimental work in order to optimize spintronic nanostructures.

Questions to be addressed

  • Understanding experimental results
  • Providing efficient solutions for specific problems
  • Exploring novel properties and phenomena (magnetic diode, switching of frustrated systems,…)
  • Exploring new materials for spintronic devices (Heusler alloys, spinels, graphene,…)
  • Providing reliable self-consistent transport/micromagnetic solutions
  • Development of novel modeling and simulation approaches
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  • Quantum theory of Spin Transfer Torques (STT) and TMR in magnetic tunnel junctions
  • Modeling of GMR in spin valves and nanoconstrictions
  • Theory of Spin Hall Effect (SHE) in magnetic nanostructures
  • Theory of Magnetic insulator and Bloch-states symmetry based Spin Filtering (SF)
  • Magnetic properties and spintronic phenomena in graphene–based structures
  • Perpendicular magnetic anisotropy (PMA) and Interlayer Exchange coupling (IEC) from first-principles
  • Modeling and simulation of domain wall (DW) motion
  • Magnetization dynamics simulations in spin torque oscillators (STO)
  • Modeling of magnetization switching in MRAM
  • Self-consistent transport/magnetic simulations
  • Modeling of current-in-plane tunneling in MTJs
  • Institut Néel, Grenoble (France)


  • Institut Néel, Grenoble (France)
  • Unité Mixte Physique CNRS/Thalès, Palaiseau (France)
  • Laboratoire de Physique des Solides, Orsay (France)
  • Catalan Institute of Nanotechnology, Barcelona (Spain)
  • CEA/INAC/SP2M et SPSMS, Grenoble (France)
  • CEA/LETI, Grenoble (France)
  • In Silicio, Aix En Provence (France)
  • University of Tokyo (Japan)
  • Moscow Lomonosov State University (Russia)
  • Crocus Nanotechnology (France)
  • Institut Jean Lamour, Nancy (France)
  • CEA/Saclay (France)
  • Institut d’électronique fondamentale (France)
  • Korean Institute of Science and Technology, Seoul (Korea)
  • KAUST (Saudi Arabia)
  • University of Puerto Rico (USA)
  • University of Alabama (USA)


M. Chshiev, C. Baraduc, L. Buda-Prejbeanu, D. Gusakova, A. Hallal, R. Vadapoo, A. Vaysset, P.-Y. Clement, S. Martin, M. Sturma