Published in Electronics Letters
Magnetic random access memory based on magnetic tunnel junctions (MTJs) is among the most attractive technologies of emerging non-volatile memories. However, the integration of spin-based devices in integrated circuits is still hindered by a lack of established standard electrical simulator models. Many of such models have been proposed during the ...
Published in Applied Physics Letters
The feasibility of 3-bits per cell storage in self-referenced thermally assisted magnetic random access memories is demonstrated both by macrospin simulations and experiments. The memory dot consists of a storage layer where CoFe/CoFeB magnetization direction is pinned by an IrMn layer using the ferromagnet/antiferromagnet interfacial exchange coup...
Published in Electronics Letters
The spin-orbit-torque magnetic tunnel junction (SOT-MTJ) is a promising device for data storage. Most of the issues encountered with scalable spin transfer-torque (STT) devices are visibly moved. Thanks to a three-terminal architecture, the reliability is increased by separating the read and the write paths. Furthermore, SOT-induced magnetisation s...
Published in 2013 International Semiconductor Conference Dresden - Grenoble (ISCDG)
The combination of non-volatility, fast access time and endurance in MRAM technology paves the path toward an universal memory. Although an expanding attention is given to two-terminal Magnetic Tunnel Junctions (MTJ) based on Spin-Transfer Torque (STT) switching as the potential candidate for future memories, its reliability is significantly decrea...
Published in Applied Physics Letters
Published in International Journal of Nanotechnology
Published in Physical Review B
Published in Physical Review B
Published in Applied Physics Letters
Published in physica status solidi (b)
