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Comparison of Verilog-A compact modelling strategies for spintronic devices

Khaled Jabeur F. Bernard-Granger B. Dieny G. Prenat G. Di Pendina

Published in Electronics Letters

Magnetic random access memory based on magnetic tunnel junctions (MTJs) is among the most attractive technologies of emerging non-volatile memories. However, the integration of spin-based devices in integrated circuits is still hindered by a lack of established standard electrical simulator models. Many of such models have been proposed during the ...

Self-referenced multi-bit thermally assisted magnetic random access memories

Q. Stainer L. Lombard K. Mackay dongyoon lee S. Bandiera C. Portemont C. Creuzet R. Sousa B. Dieny

Published in Applied Physics Letters

The feasibility of 3-bits per cell storage in self-referenced thermally assisted magnetic random access memories is demonstrated both by macrospin simulations and experiments. The memory dot consists of a storage layer where CoFe/CoFeB magnetization direction is pinned by an IrMn layer using the ferromagnet/antiferromagnet interfacial exchange coup...

Ultra-energy-efficient CMOS/magnetic non-volatile flip-flop based on spin-orbit torque device

Khaled Jabeur G. Prenat G. Di Pendina

Published in Electronics Letters

The spin-orbit-torque magnetic tunnel junction (SOT-MTJ) is a promising device for data storage. Most of the issues encountered with scalable spin transfer-torque (STT) devices are visibly moved. Thanks to a three-terminal architecture, the reliability is increased by separating the read and the write paths. Furthermore, SOT-induced magnetisation s...

Compact model of a three-terminal MRAM device based on Spin Orbit Torque switching

Khaled Jabeur G. Prenat G. Di Pendina L. Buda-Prejbeanu I.L. Prejbeanu B. Dieny

Published in 2013 International Semiconductor Conference Dresden - Grenoble (ISCDG)

The combination of non-volatility, fast access time and endurance in MRAM technology paves the path toward an universal memory. Although an expanding attention is given to two-terminal Magnetic Tunnel Junctions (MTJ) based on Spin-Transfer Torque (STT) switching as the potential candidate for future memories, its reliability is significantly decrea...

Improved coherence of ultrafast spin-transfer-driven precessional switching with synthetic antiferromagnet perpendicular...

A. Vaysset C. Papusoi L. Buda-Prejbeanu S. Bandiera Marins de Castro Y. Dahmane J.-C. Toussaint U. Ebels S. Auffret R. Sousa ...

Published in Applied Physics Letters

Spin-transfer effect and its use in spintronic components

B. Dieny R.C. Sousa J. Herault C. Papusoi G. Prenat U. Ebels D. Houssameddine B. Rodmacq S. Auffret L.D. Prejbeanu ...

Published in International Journal of Nanotechnology

Effect of crystalline defects on domain wall motion under field and current in nanowires with perpendicular magnetizatio...

F. Garcia-Sanchez H. Szambolics A. Mihai L. Vila A. Marty J.-P. Attané J.-Ch. Toussaint L. Buda-Prejbeanu

Published in Physical Review B

Transport and vortex pinning in micron-size superconducting Nb films

Lamya Ghenim Jean-Yves Fortin Gehui Wen Xixiang Zhang Claire Baraduc Jean-Claude Villegier

Published in Physical Review B

Benefit of inserting a (Cu/Pt) intermixing dual barrier for the blocking temperature distribution of exchange biased Co/...

K. Akmaldinov S. Auffret I. Joumard B. Dieny V. Baltz

Published in Applied Physics Letters

Spontaneous spin polarization and spin pumping effect on edges of graphene antidot lattices

K. Tada T. Hashimoto J. Haruyama H. Yang Mairbek CHSHIEV

Published in physica status solidi (b)

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