Magnetic random access memory based on magnetic tunnel junctions (MTJs) is among the most attractive technologies of emerging non-volatile memories. However, the integration of spin-based devices in integrated circuits is still hindered by a lack of established standard electrical simulator models. Many of such models have been proposed during the ...
The feasibility of 3-bits per cell storage in self-referenced thermally assisted magnetic random access memories is demonstrated both by macrospin simulations and experiments. The memory dot consists of a storage layer where CoFe/CoFeB magnetization direction is pinned by an IrMn layer using the ferromagnet/antiferromagnet interfacial exchange coup...
The spin-orbit-torque magnetic tunnel junction (SOT-MTJ) is a promising device for data storage. Most of the issues encountered with scalable spin transfer-torque (STT) devices are visibly moved. Thanks to a three-terminal architecture, the reliability is increased by separating the read and the write paths. Furthermore, SOT-induced magnetisation s...
The combination of non-volatility, fast access time and endurance in MRAM technology paves the path toward an universal memory. Although an expanding attention is given to two-terminal Magnetic Tunnel Junctions (MTJ) based on Spin-Transfer Torque (STT) switching as the potential candidate for future memories, its reliability is significantly decrea...